HG E3FA-TN11

Order number
HG-E3FA-TN11 HG-E3FA-TN12
HG-E3FA-TP11 HG-E3FA-TP12

Characteristic
Good quality and high reliabilit
EMCprotectiongrade
High optical disturbance resistance
Robusthousing

Overall Dimensions

Technical Parameters

Detection method:Antithetic type
Detection distance:12:15m11:20m
Standard detection objects:Opaque body φ Above 7mm Hysteresis:-
Half power angle:Above 2℃
Light source (wavelength):Red light emitting diode(624nm)
Supplyvoltage:DC10~30V(Including voltage fluctuations ofless than 10%(p-p).)
Currentconsumption:Thelighttransmitter is above 40mA, and the light receiver is below 25mA Control output:NPN NO or PNP NO Operating mode:-
load current:Below 100mA Residual voltage:Below 3V
Workinstructions:Actionindicator(orange),stabilityindicator (green), projector power indicator (green
Protectioncircuit:Powerpolarityreverseconnection protection, output short circuit protection and
output polarity reverse connection protection
Response time:0.5ms
Sensitivity adjustment
Ambientillumination(lightreceiving side):Incandescent lamp: less than 3000lx/Sunlight: less than 10000lx
Ambienttemperature:Ambienttemperature:Duringoperation:-25℃~55℃/duringstorage:-40℃~
70℃℃(no icing,condensation)

Ambienthumidity:storage:Duringoperation: 35~85%/during 35~95% (no condensation)
Insulationimpedance:Betweenthecharging part of the charging part above 20MΩ (DC500V shake meter) and the shell
Resistanceto highpressure:At1000V AC50/60Hz, 1 minute between the charging part
and the case
Vibrationresistance:Durability:10~55Hzcomplex amplitude 1.5mm X, Y, Z in each direction for 2 hours
IImpact resistance:500m/S2, 3 times in X, Y, Z direction Degree of protection:IP66 Housing material:ABS
Lens and display section:PMMA Knob:POM Nut:POM
Weight:Cable type: Approx.60g